A blue light emitting diode (LED) chip has been facilely fabricated on a 4-inch patterned sapphire substrate based on an InGaN/GaN multiple quantum well structure, composed of a Ce³⁺ doped Yttrium Aluminum Garnet (YAG) yellow phosphor packaged into a white LED chip. The epitaxial growth, fabrication, and package process of the device have been briefly described; the structural properties and device performance have also been systematically studied. The surface morphology of the sample in a whole wafer has a good uniformity. And the curvature distribution with a maximum value of ~70 μm, it gradually becomes smaller from the middle to the periphery, which is mainly resulting from the strain state evolution during the film growth. When increasing the injection current, it is significant interestingly observed in the electroluminescence (EL) spectrum that the blue light peak is blue-shifted, it is due to the influence reducing of the polarization field and/or the energy band filling, while the blue light peak and the yellow-green light peak are red-shifted due to the thermal effect of the chip. In addition, the light output power exhibits a linearly incremental relationship with a little saturation when the injection current varies from 0 to 100 mA. Therefore, it is firmly believed that the corresponding chip fabrication and characterization technology will play a certain role in promoting the development of solid-state lighting field.

已在基于由Ce ³⁺组成的InGaN / GaN多量子阱结构的4英寸图案化蓝宝石衬底上轻松制造了蓝色发光二极管（LED）芯片。掺杂的钇铝石榴石（YAG）黄色荧光粉封装在白色LED芯片中。简要描述了该器件的外延生长，制造和封装过程。结构特性和器件性能也得到了系统的研究。整个晶片中样品的表面形态具有良好的均匀性。曲率分布的最大值约为70μm，从中间到外围逐渐变小，这主要是由于薄膜生长过程中的应变状态演变所致。当增加注入电流时，有趣的是，在电致发光（EL）光谱中观察到蓝光峰发生了蓝移，这是由于极化场和/或能带填充的影响减小，而蓝色光峰和黄绿色光峰由于芯片的热效应而发生红移。另外，当注入电流从0到100 mA变化时，光输出功率呈现线性增加的关系，并且饱和度很小。因此，坚信相应的芯片制造和表征技术将在促进固态照明领域的发展中发挥一定的作用。