In this context, g-C₃N₄ nanosheets were decorated by mesoporous Bi₂S₃ nanoparticles (NPs) to produce newly Bi₂S₃/g-C₃N₄ heterojunctions containing various proportions (1, 2, 3, 4 wt.%) of Bi₂S₃ NPs. This was established using a hard and soft template. The fabricated heterojunctions succeeded to achieve highly efficient elimination of Hg²⁺ via photocatalytic reduction when illuminated by visible light. Furthermore, the synthesized heterojunctions acquired improved features such as limited band gap energy and significant specific surface areas. The homogenous distribution of the spherical-like Bi₂S₃ NPs (particle dimension of 3–6 nm) on g-C₃N₄ nanosheets was declared from the transmission electron microscopy (TEM) technique. The improved Bi₂S₃/g-C₃N₄ nanocomposite of 4 wt.% Bi₂S₃ NPs acquired enlarged magnetization magnitude (35.5 emu g^–1) in comparison to that of Bi₂S₃ NPs (30.5 emu g^–1). Tremendous efficiency of the elimination of Hg²⁺ via photocatalytic reduction has been accomplished by the prepared Bi₂S₃/g-C₃N₄ heterojunction in comparison to those by Bi₂S₃ NPs or g-C₃N₄ nanosheets. Complete (100%) elimination of Hg²⁺ has been established by 4 wt.% Bi₂S₃/g-C₃N₄ photocatalyst whereas, the efficiency attained over Bi₂S₃ NPs was 24% after 1 h of visible light illumination. Moreover, the rate of the photocatalytic elimination of Hg²⁺ by 4 wt.% Bi₂S₃/g-C₃N₄ nanocomposite was greater (490.00 µmolg⁻¹ h⁻¹) compared to the rates depicted over neat Bi₂S₃ NPs (100.00 µmolg⁻¹ h⁻¹) and neat g-C₃N₄ (65.00 µmolg⁻¹ h⁻¹). In addition, recycled mesoporous Bi₂S₃/g-C₃N₄ heterojunctions proposed more excellent stability and durability towards the photocatalytic reduction of mercuric cations.

在这种情况下，用介孔Bi ₂ S ₃纳米颗粒（NPs）装饰gC ₃ N ₄纳米片，以产生新的Bi ₂ S ₃ / gC ₃ N ₄异质结，其中含有不同比例的（1、2、3、4 wt。％） Bi ₂ S ₃ NP。这是使用硬模板和软模板建立的。制备的异质结成功实现了Hg ^2+的高效消除通过可见光照射时的光催化还原。此外，合成异质结获得了改进的功能，例如有限的带隙能量和显着的比表面积。球形电子Bi ₂ S ₃ NPs（颗粒尺寸为3–6 nm）在gC ₃ N ₄纳米片上的均匀分布由透射电子显微镜（TEM）技术证明。该改进的Bi ₂小号₃ / GC ₃ Ñ ₄的纳米复合材料的4重量％的Bi ₂小号₃的NP后天放大磁化大小（35.5鸸鹋克^-1相较于的Bi）₂S ₃ NP（30.5 emu g ^–1）。与Bi ₂ S ₃ NP或gC ₃ N ₄纳米片相比，通过制备的Bi ₂ S ₃ / gC ₃ N ₄异质结已经实现了通过光催化还原消除Hg ^2+的巨大效率。已经通过4重量％的Bi ₂ S ₃ / gC ₃ N ₄光催化剂建立了完全（100％）的Hg ²⁺消除，而效率高于Bi ₂ S _3。可见光照射1 h后，NPs为24％。此外，与纯Bi ₂ S ₃ NPs相比，通过4 wt。％Bi ₂ S ₃ / gC ₃ N ₄纳米复合材料光催化消除Hg ²⁺的速率更大（490.00 µmolg ^-1  h ^-1）。（100.00μmolg ^-1  h ^-1）和纯gC ₃ N ₄（65.00μmolg ^-1  h ^-1）。另外，再生介孔Bi ₂ S ₃ / gC ₃ N ₄ 异质结提出了对光催化还原汞阳离子更优异的稳定性和耐久性。