Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0–0.3),Journal of Materials Chemistry C

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Effect of H2S pre-annealing treatment on interfacial and electrical properties of HfO2/Si1−xGex (x = 0–0.3)
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2020-12-29 , DOI: 10.1039/d0tc04760k
Woohui Lee _{1,

2,

3} , Changmin Lee _{1,

2,

3} , Jinyong Kim _{1,

2,

3} , Jehoon Lee _{1,

2,

3} , Deokjoon Eom _{1,

2,

3} , Jae Chan Park _{3,

4,

5} , Tae Joo Park _{3,

4,

5} , Hyoungsub Kim _{1,

2,

3}

Affiliation

To understand the effect of H₂S pre-annealing treatment on a Si_1−xGe_x alloy film, the interfacial and electrical characteristics of atomic-layer-deposited HfO₂/Si_1−xGe_x were studied while varying the Ge concentration (x value) from 0 to 0.3. H₂S pre-annealing was performed on the Si_1−xGe_x substrates at 400 °C for 30 s using a rapid thermal annealing system prior to the HfO₂ deposition. As the Ge concentration in Si_1−xGe_x increased, the H₂S pretreatment caused a greater increase in the capacitance-equivalent oxide thickness because of accelerated interfacial oxidation by a thermal annealing side effect. However, it was advantageous in reducing the interface state density on a Ge-rich surface, which suggested effective sulfur passivation on the Ge dangling bonds at the HfO₂/Si_1−xGe_x interface. Furthermore, the H₂S pretreatment was effective in suppressing the out-diffusion of Ge towards the HfO₂ film, which was beneficial in improving the near-interface charge trapping characteristics.

中文翻译：

H2S预退火处理对HfO2 / Si1-xGex（x = 0–0.3）的界面和电学性质的影响

为了了解H ₂ S预退火处理对Si _{1− x} Ge _x合金膜的影响，研究了在改变Ge浓度的同时沉积原子层的HfO ₂ / Si _{1− x} Ge _x的界面和电学特性。（x值）从0到0.3。在HfO ₂沉积之前，使用快速热退火系统在400°C的Si _1-_x Ge _x衬底上进行H ₂ S预退火30 s 。随着Si _1-_x Ge _x中Ge浓度的增加，H ₂S预处理由于热退火副作用加速了界面氧化，从而导致等效电容氧化物厚度的更大增加。然而，在降低富含Ge的表面上的界面态密度方面是有利的，这表明在HfO ₂ / Si _{1- x} Ge _x界面处的Ge悬挂键上的有效硫钝化。此外，H ₂ S预处理有效地抑制了Ge向HfO ₂膜的向外扩散，这有利于改善近界面电荷俘获特性。

更新日期：2021-01-14

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