This research work presents the investigation of realizing an on-chip antenna based on the metamaterial concept, which is working over the terahertz (THz) band for applications in integrated circuits. The proposed on-chip antenna is constructed of five stacked layers of polyimide and aluminum as top and bottom substrates, radiation patches, ground plane, and feed line. The four square-shaped radiation patches are implemented on the 50 m top-polyimide substrate, and the feed line is realized on the 50 m bottom-polyimide layer by designing the simple square microstrip lines, which are all connected to each other and then excited by waveguide port. The ground plane including a coupling square slot has sandwiched between the top- and bottom-polyimide layers. The coupling square slot etched on the ground plane is exactly placed under the patch to optimum transfer the electromagnetic signal from the bottom feed line to the top radiation patch. To achieve high performance parameters without increasing the antenna's physical dimensions, the metamaterial and substrate integrated waveguide properties have been applied to the antenna structure by implementing linear tapered slots on the patch top surfaces and metallic via holes throughout the middle ground plane connecting top and bottom substrates to each other. The slots play the role of series left-handed (LH) capacitors (C_L) and the via holes act as shunt LH inductors (L_L). The overall dimension of the proposed metamaterial-based on-chip antenna is 1000 × 1000 × 100 μm³. This antenna can cover the frequency band from 0.6 THz to 0.622 THz, which is equal to 20 GHz bandwidth. The radiation gain and efficiency across the operating frequency band varies from 1.1 dBi to 1.8 dBi, and from 58% to 60.5%, respectively. The results confirm that the proposed on-chip antenna with compact dimensions, wide bandwidth over the terahertz domain, low profile, cost effective, simple configuration, and easy to manufacture can be potentially appropriate for terahertz integrated circuits.

中文翻译：

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使用超材料概念和SIW原理的片上天线设计适用于工作于0.6–0.622 THz的太赫兹集成电路

这项研究工作提出了基于超材料概念实现片上天线的研究，该天线工作在太赫兹（THz）频段，用于集成电路。拟议中的片上天线由聚酰亚胺和铝的五个堆叠层构成，作为上下基板，辐射贴片，接地层和馈电线。在50 m的顶部聚酰亚胺基板上实现了四个方形辐射斑片，在50  m的聚酰亚胺衬底上实现了馈线 通过设计简单的正方形微带线将m底部聚酰亚胺层相互连接，然后通过波导端口进行激励。包括耦合方槽的接地层夹在顶部和底部聚酰亚胺层之间。接地平面上蚀刻的耦合方槽正好位于贴片下方，以最佳地将电磁信号从底部馈线传输到顶部辐射贴片。为了在不增加天线物理尺寸的情况下获得高性能参数，超材料和基片集成的波导特性已通过在贴片顶面上实现线性锥形缝隙以及在连接顶基和底基的整个中间接地面上实现金属通孔而应用于天线结构对彼此。C _L）和通孔充当并联LH电感器（L _L）。所提出的基于超材料的片上天线的整体尺寸为1000×1000×100  μ米³。该天线可以覆盖从0.6 THz到0.622 THz的频带，该频带等于20 GHz带宽。工作频带上的辐射增益和效率分别从1.1 dBi到1.8 dBi，以及从58％到60.5％。结果证实，所提出的片上天线具有紧凑的尺寸，太赫兹域上的宽带宽，低轮廓，成本有效，简单的配置以及易于制造，可能适合太赫兹集成电路。