Band Edge Engineering for the Improvement of Open‐Circuit Voltage: Ag‐Based Selenized Cu2ZnSn(SSe)4 Surface Regulated by Lithium,Solar RRL

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Band Edge Engineering for the Improvement of Open‐Circuit Voltage: Ag‐Based Selenized Cu2ZnSn(SSe)4 Surface Regulated by Lithium
Solar RRL ( IF 6.0 ) Pub Date : 2021-01-14 , DOI: 10.1002/solr.202000631
Yingru Cui ₁ , Ke Zhao ₂ , Chengyan Liu ₁ , Huiwen Xiang ₁ , Hanzhen Liang ₁ , Yu Jia _{1,

2}

Affiliation

Open‐circuit voltage (V_oc) of kesterite Cu₂ZnSn(SSe)₄ (CZTSSe) solar cells is severely stalemated by the pinning of fermi energy level due to the excessive p‐type Cu_Zn acceptor near the buffer/absorber interface. Although the formation of Cu_Zn can be suppressed by Ag incorporation, the high formation energy of p‐type Ag_Zn defects results in the expected weak n‐type surface difficult to be maintained. Based on the doping limit rule, it is found that Ag‐based selenized kesterite (Ag₂ZnSnSe₄) facilitating the formation of n‐type defects by lowering the conduction band is conducive to the stable weak n‐type surface rather than suppressing the formation of p‐type defects by lowering the valence band. Furthermore, Li post‐treatment makes part of strong n‐type region into the expected weak n‐type due to the low formation energy of p‐type Li_Zn, which is greatly convenient for experimental implementation. This study presents that Ag‐based selenized CZTSSe surface combined with Li post‐treatment is a feasible way to overcome V_oc‐deficit of kesterite solar cells and highlights that band edge engineering is a promising way for designing an expected n‐ or p‐type characteristic of chalcogenide semiconductors by extrinsic doping.

中文翻译：

带边工程，用于改善开路电压：受锂调节的基于Ag的硒化Cu2ZnSn（SSe）4表面

由于在缓冲液/吸收剂界面附近存在过多的p型Cu _Zn受体，费米能级的固定严重影响了钾盐沸石Cu ₂ ZnSn（SSe）₄（CZTSSe）太阳能电池的开路电压（V _oc）。尽管可以通过掺入Ag来抑制Cu _Zn的形成，但是p型Ag _Zn缺陷的高形成能导致难以维持预期的弱n型表面。根据掺杂极限法则，发现了基于Ag的硒化钾钛矿（Ag ₂ ZnSnSe ₄）通过降低导带来促进n型缺陷的形成有利于稳定的弱n型表面，而不是通过降低价带来抑制p型缺陷的形成。此外，由于p型Li _Zn的形成能低，Li后处理使强n型区域的一部分变成了预期的弱n型区域，这对于实验实施非常方便。这项研究提出，基于银-硒化的CZTSSe表面与Li后处理组合是克服一个可行的方法V _OC-锌黄锡矿太阳能电池和亮点的赤字频带边缘工程是用于设计预期n型或p型有前途的方式非本征掺杂的硫族化物半导体的特性。

更新日期：2021-03-10

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