This article is dedicated to HfO₂‐based ferroelectrics applications in nanoelectronics, especially to topics not well developed up to now, such as microwaves, energy harvesting, and neuromorphic devices working as artificial neurons and synapses. Other well‐covered topics in the literature, such as memories or negative‐capacitance ferroelectric field‐effect transistors, will be only briefly mentioned. The main impact of HfO₂‐based ferroelectrics is the possibility of using them for fabricating at the wafer‐level complementary metal oxide semiconductor (CMOS) compatible high‐frequency devices, such as phase‐shifters, antenna arrays, or filters with a high degree of tunability and miniaturization, as well as energy harvesting devices and neuromorphic key components. In addition, the recent transfer of 2D materials on HfO₂ ferroelectrics has demonstrated new physical effects, such as opening a 0.2 eV bandgap in graphene monolayers, and allows the manufacture of very high‐mobility field‐effect transistors (FETs) based on graphene/HfZrO.

中文翻译：

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基于HfO2的铁电在纳米电子学中的应用

本文致力于纳米电子中基于HfO ₂的铁电学应用，尤其是到目前为止还不完善的主题，例如微波，能量收集以及充当人工神经元和突触的神经形态设备。文献中其他一些广为人知的主题，例如存储器或负电容铁电场效应晶体管，将仅作简要介绍。HfO ₂的主要影响基于铁电的材料有可能用于在晶圆级互补金属氧化物半导体（CMOS）兼容的高频设备上制造，例如移相器，天线阵列或具有高度可调性和小型化的滤波器，因为以及能量收集装置和神经形态关键组件。此外，最近在HfO ₂铁电体上进行2D材料转移已显示出新的物理效应，例如在石墨烯单层中打开0.2 eV带隙，并允许制造基于石墨烯/的非常高迁移率的场效应晶体管（FET）。 HfZrO。