Using a microscopic model we have investigated the electric, dielectric and magnetic properties of Ga, Er and Zn doped α-Fe₂O₃ thin films. The polarization P in Ga doped α-Fe₂O₃ decreases with increasing Ga content x, and increases with enhancing magnetic field h and decreasing film thickness N. In Ga doped hematite the dielectric constant ϵ shows a peak at $T_C$. ϵ decreases with increasing h, indicating a strong magneto-dielectric effect. The contributions of the spin-phonon and phonon-phonon interactions below and above $T_C$ are considered. The dielectric constant in Ga, Er and Zn ion doped Fe₂O₃ can increase or decrease for different ions and different ion doping concentration. The ion doping dependence of the magnetization is also calculated.

使用微观模型，我们研究了Ga，Er和Zn掺杂的α -Fe ₂ O ₃薄膜的电，介电和磁性能。Ga掺杂的α -Fe ₂ O _3中的极化P随Ga含量x的增加而减小，随磁场h的增加和膜厚度N的减小而增加。在掺杂Ga的赤铁矿中，介电常数ϵ在${Ť}_C$。ε随减小ħ，表示强磁性电介质的作用。上下自旋声子和声子-声子相互作用的贡献${Ť}_C$被考虑。Ga，Er和Zn离子掺杂的Fe ₂ O _3中的介电常数可以随不同离子和不同离子掺杂浓度而增加或减小。还计算了磁化的离子掺杂依赖性。