Highly transparent amorphous oxide-metal-amorphous oxide (OMO) multilayers were fabricated at room temperature using amorphous semiconducting Si–Zn–Sn–O (SZTO) metal oxide and metallic silver. Amorphous SZTO (a-SZTO) showed high refractive index of 2.04 which is comparable to crystalline ITO, and wide optical bandgap (E_g) of 3.26 eV, allowing transmitting of wavelength above 380 nm. SZTO based OMO showed low resistivity at the level of 10⁻⁵ Ω cm by inserting an Ag layer. After optimizing the optical and electrical properties by changing Ag and SZTO sublayer thickness, a transparent conductive electrode with high average transmittance of 96.5% in visible region and low resistivity of 7.158 × 10⁻⁵ Ω cm was fabricated at room temperature. The results show that SZTO is a promising sublayer for high performance transparent conducting oxides applications.

室温下使用非晶态半导体Si-Zn-Sn-O（SZTO）金属氧化物和金属银制造高度透明的非晶氧化物-金属非晶氧化物（OMO）多层。非晶态SZTO（a-SZTO）显示出2.04的高折射率，可与晶体ITO相媲美，而光学带隙（E _g）则为3.26 eV，可透射380 nm以上的波长。基于SZTO OMO显示出低电阻率在10水平^-5  Ω厘米通过插入Ag层。通过改变Ag和SZTO子层的厚度来优化光学和电学性能后，透明导电电极在可见光区域的平均透射率高达96.5％，电阻率低至7.158×10 ^-5 Ωcm在室温下制造。结果表明，SZTO是用于高性能透明导电氧化物应用的有前途的子层。