Abstract

The paper presents a literature review of the latest achievements in the creation of highly efficient thin-film solar cells (SCs) based on multicomponent polycrystalline materials: semiconductors of the A^IIB^VI groups of the periodic table, cadmium telluride (CdTe) and a three-component compound A^IB^IIIC^VI copper–indium–gallium and selenium (Cu (In, Ga)Se₂). The main criteria for the selection of the buffer layer material for thin-film SCs based on CdTe and Cu (In, Ga)Se₂ are analyzed. The values of the main output parameters of the load current–voltage characteristic (short-circuit current, open-circuit voltage, fill factor of a light current–voltage characteristic, efficiency) of high-performance SCs based on CdTe and Cu(In, Ga)Se₂, which have been achieved to date, are presented. The spectral photosensitivity of a SC in the short-wave region of the electromagnetic spectrum is determined by the band gap width and thickness of the p–n transition frontal–buffer layer. An increase in the photosensitivity in the short-wave spectrum part of electromagnetic radiation is achieved by an increase in the band gap of the buffer layer. In this case, it is necessary to take into account the important energy (energy of electron affinity) and crystallographic (crystal lattice parameter) parameters of the semiconductor material. As one of the promising materials for the buffer layer, semiconductor polycrystalline layers from the A^IIB^VI class, semiconductor chemical ternary compounds Zn_xCd_{1 – x}S, in which E_g varies from 2.4 eV (x = 0, CdS) to 3.6 eV (x = 1, ZnS) are proposed. An analysis of the compatibility of Zn_xCd_{1 – x}S layers with different x values, as a buffer layer for SCs based on CdTe and Cu(In, Ga)Se₂, is carried out. Possible scenarios of variation in the main output parameters of SCs, such as short-circuit current and open-circuit voltage, are analyzed.

中文翻译：

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文献综述中用于薄膜太阳能电池的Zn x Cd 1 – x S缓冲层的特征

摘要

本文介绍了基于多组分多晶材料的高效薄膜太阳能电池（SCs）的最新研究成果的文献综述：周期表中A ^II B ^VI组的半导体，碲化镉（CdTe）和三组分化合物A ^I B ^III C ^VI铜-铟-镓和硒（Cu（In，Ga）Se ₂）。基于CdTe和Cu（In，Ga）Se ₂的薄膜SC缓冲层材料选择的主要标准被分析。基于CdTe和Cu（In，的）高性能SC的负载电流-电压特性（短路电流，开路电压，轻电流-电压特性的填充系数，效率）的主要输出参数值介绍了迄今已实现的Ga）Se ₂。SC在电磁光谱的短波区域中的光谱光敏性由带隙宽度和p – n的厚度决定过渡额叶缓冲层。通过增加缓冲层的带隙来实现电磁辐射的短波谱部分中的光敏性的增加。在这种情况下，必须考虑半导体材料的重要能量（电子亲和能）和晶体学（晶格参数）参数。作为缓冲层的有前途的材料之一，A ^II B ^VI类半导体多晶层是半导体化学三元化合物Zn _x Cd _{1 – x} S，其中E _g从2.4 eV（x = 0，CdS）变化到3.6 eV（x= 1，ZnS）。对具有不同x值的Zn _x Cd _{1 – x} S层（作为基于CdTe和Cu（In，Ga）Se _2的SC的缓冲层）的相容性进行了分析。分析了SC的主要输出参数（例如短路电流和开路电压）变化的可能情况。