Abstract

This study is devoted to analysis by the method of modeling photoelectric processes of charge transfer in thin silicon structures with a p–n junction containing nanoparticles of various metals, their sizes, and volume distribution.The absorption and current–voltage (I–V) characteristics of thin-film silicon solar cells, which contain the metal nanoparticles localized on the surface dielectric antireflecting coating, in the emitter and base with high and low doping degree, and on the interfaces of these layers, are defined. As a basic method for research, the Sentaurus TCAD is chosen, which includes the Structure Device Editor, Sentaurus Device, Sentaurus Visual, and Sentaurus Workbench packages with wide capabilities for modelling silicon solar cells with a flat p–n junction. The absorption and I–V characteristics of photoelectric converters, containing metal nanoparticles in various thin layers of the structure, are determined by analyzing the computational results and discussing the physical nature of observable processes. The recommendations are offered for creating thin-film silicon plasmonic p–n junction solar cells with optimized sizes of metal nanoparticles, their distribution, and, hence, with improved efficiency of photoelectric conversion of energy. The expediency of creation of ultraviolet radiation detectors on the basis of thin-film silicon structures with metal nanoparticles is shown. The absorption and I–V characteristics of photoelectric converters, containing metal nanoparticles in thin layers of the dielectric coating, emitter, and base with high and low doping degrees and also on interfaces of these layers are compared. The most effective absorption of the solar spectrum in the region of the emitter up to the metallurgical border of the p–n junction and the best efficiency of photoelectric energy conversion of silicon solar cells are revealed. The optimum sizes of metals nanoparticles, regularities of their distribution, and depths of occurrence of the p–n junction for thin layers of crystalline silicon are defined. The recommendations for creation of third-generation thin-film silicon plasmonic solar cells and high-sensitivity photovoltaic detectors of ultra-violet radiation are developed.

中文翻译：

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金属纳米粒子刺激硅结构薄层中阳光的光活性吸收

摘要

这项研究致力于通过对带有p - n结的薄硅结构中的电荷转移的光电过程进行建模的方法进行分析，该结构包含各种金属的纳米颗粒，其大小和体积分布。吸收和电流-电压（I - V）定义了薄膜硅太阳能电池的特性，薄膜硅太阳能电池包含位于表面介电增透膜中，高低掺杂程度的发射极和基极以及这些层的界面上的金属纳米粒子。作为研究的基本方法，选择了Sentaurus TCAD，其中包括“结构设备编辑器”，“ Sentaurus设备”，“ Sentaurus Visual”和“ Sentaurus Workbench”程序包，这些程序包具有广泛的功能，可为具有平坦p – n结的硅太阳能电池建模。吸收和I – V通过分析计算结果并讨论可观察过程的物理性质，确定在结构的各个薄层中包含金属纳米粒子的光电转换器的特性。提供了有关创建具有最佳尺寸的金属纳米粒子，其分布并因此提高了能量的光电转换效率的薄膜硅等离子体P-n结太阳能电池的建议。显示了基于具有金属纳米颗粒的薄膜硅结构创建紫外线辐射检测器的便利性。吸收和I – V比较了光电转换器的特性，这些转换器在高，低掺杂度的介电涂层，发射极和基极的薄层中以及在这些层的界面上都包含金属纳米粒子。揭示了在发射极区域内直至p–n结的冶金边界最有效的太阳光谱吸收以及硅太阳能电池的最佳光电能量转换效率。金属纳米粒子的最佳尺寸，其分布规律和p–n的出现深度定义了晶体硅薄层的结。提出了有关创建第三代薄膜硅等离子体太阳能电池和紫外线高灵敏度光伏探测器的建议。