Abstract

We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures, including ones above the atmospheric level. It is established that the epitaxial growth at higher pressures does not affect the crystalline perfection of epilayers, their electron mobility, and background impurity level, but leads to the formation of GaN surface with lower lateral scale of inhomogeneities. In addition, the reactor pressure influences the ratio of edge and impurity lines in the photoluminescence spectra and leakage current level in reversely biased Schottky barriers.

中文翻译：

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反应堆压力对MOVPE生长的GaN层性能的影响

摘要

我们已经研究了在各种反应堆压力下（包括高于大气压力的情况下），蓝宝石衬底上金属有机气相外延（MOVPE）对GaN层的生长的影响。已经确定，在较高压力下的外延生长不影响外延层的晶体完善性，它们的电子迁移率和背景杂质水平，但是导致形成具有较低横向不均匀性的GaN表面。另外，反应器压力会影响光致发光光谱中边缘线和杂质线的比率以及反向偏置的肖特基势垒中的泄漏电流水平。