Abstract

Metal–ferroelectric–semiconductor Pb(ZrTi)O₃/Ba_0.2Sr_0.8TiО₃/Si(001) heterostructures have been synthesized by radiofrequency cathode sputtering. It has been established that the Pb(ZrTi)O₃ films are single-phase and textured and the degree of predominance of one crystallographic orientation over another (110 or 001) is determined by the Ba_0.2Sr_0.8TiO₃ sublayer thickness. It is shown that, by varying the sublayer thickness and/or the amplitude of one period of the external bipolar field effect, one can obtain different electric states of the structure, which can give rise to creating memory cells, including multilevel ones.

中文翻译：

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Ba 0.2 Sr 0.8 TiO 3子层对Si（001）衬底上锆钛酸铅钛薄膜结构和电学特性的影响

摘要

金属-铁电体-半导体的Pb（ZrTi）O ₃ / BA _0.2锶_0.8 TiО ₃ / Si的（001）异质结构已通过射频的阴极溅射合成。已经确定Pb（ZrTi）O ₃膜是单相的并且具有纹理，并且一种晶体学取向相对于另一种晶体学取向（110或001）的优势程度由Ba _0.2 Sr _0.8 TiO ₃子层厚度确定。结果表明，通过改变子层的厚度和/或外部双极场效应的一个周期的幅度，人们可以获得结构的不同电态，从而可以产生包括多级的存储单元。