Abstract

Temperature-dependent decline in the external quantum efficiency (EQE) of blue light-emitting diodes, which is at a maximum at j < 10 A/cm² and becomes stronger with temperature increasing to 400 K, is due to the buildup of the loss for the nonradiative recombination upon carrier tunneling that involves traps and phonons. As the p–n junction becomes open at j > 40 A/cm² the decline in the external quantum efficiency in the continuous-wave and pulsed modes is determined by the loss in nonequilibrium filling by delocalized carriers of states associated with the lateral inhomogeneities in the composition of the solid solution outside the space-charge region, as well as by the loss due to the interaction of delocalized carriers with extended defects.

中文翻译：

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功率蓝光InGaN / GaN LED的效率随温度而变

摘要

蓝色发光二极管的外部量子效率（EQE）随温度而下降，这是由于损耗的增加而导致的，最大下降在j <10 A / cm ^2处，并随着温度升高至400 K而变得更强用于载流子隧穿中涉及陷阱和声子的非辐射复合。当p – n结在j > 40 A / cm ²时打开 连续波和脉冲模式下外部量子效率的下降取决于与空间电荷区域外固溶体成分的横向不均匀性有关的离域载流子的非平衡填充损失，以及由于分散的载流子与扩展缺陷的相互作用而造成的损失。