We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k{\Omega}/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3.

中文翻译：

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金属有机气相外延生长 β-(AlxGa1-x)2O3/β-Ga2O3 异质结构通道的生长和表征

我们报告了金属有机气相外延生长的 \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 调制掺杂异质结构的生长和表征。通过利用 delta 掺杂的 \b{eta}-(AlxGa1-x)2O3 势垒，在异质结构中实现了电子通道。使用传输长度方法、电容-电压和霍尔测量来研究电子通道特性。在室温下测得的霍尔片电荷密度为 1.06 x 1013 cm-2，迁移率为 111 cm2/Vs。制造的晶体管显示出 22 mA/mm 的峰值电流和 8 x 106 的开关比。5.3 k{Ω/Square 的薄层电阻是在室温下测量的，其中包括来自 \b{eta} 中的并行通道的贡献-(AlxGa1-x)2O3。