N-type conduction of sputter-deposited polycrystalline Al_0.78Sc_0.22N films was verified by Si ion implantation followed by activation annealing. The activation of dopants was found above an annealing temperature of 800 C. Under a dose of 2נ10¹⁵ cm⁻² with an activation annealing at 900 C, n-type conduction was obtained with Hall mobility and a carrier concentration of 8.6 cm² V⁻¹ s⁻¹ and 8.9נ10¹⁸ cm⁻³, respectively. The surface of n-type Al_0.78Sc_0.22N films was sensitive to humidity, and two orders of magnitude increase in the sheet resistance were measured. The phenomena can be understood by the formation of depletion from the backside of the film, caused by the balance between the spontaneous polarization and the surface charges.

溅射沉积的多晶Al _0.78 Sc _0.22 N膜的N型传导通过Si离子注入，然后进行活化退火来验证。在高于800℃的退火温度下发现了掺杂剂的活化。在2 × 10 ¹⁵ cm ^-2的剂量下，于900℃进行活化退火，获得了具有霍尔迁移率和8.6 cm ² V-的载流子浓度的n型传导^{。 1} s ^-1和8.9 × 10 ¹⁸ cm ^-3。n型Al的表面_0.78 Sc _0.22N膜对湿度敏感，并且测得的薄层电阻增加了两个数量级。通过自发极化和表面电荷之间的平衡引起的从薄膜背面形成耗尽，可以理解该现象。