Charge‐Assisted Engineering of Color Centers in Diamond,Physica Status Solidi (A) - Applications and Materials Science

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Charge‐Assisted Engineering of Color Centers in Diamond
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2021-01-12 , DOI: 10.1002/pssa.202000614
Tobias Lühmann ₁ , Jan Meijer ₁ , Sébastien Pezzagna ₁

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Owing to its unique optical and spin properties, the nitrogen‐vacancy (NV) center holds the promise of a diamond‐based room‐temperature scalable quantum computer, but the numerous technical and physical issues are not yet overcome, especially the poor N to NV conversion. The NV and other color centers are, however, successfully used as multitasking quantum sensors, and open new routes in quantum sensing technologies. Most recently, several breakthroughs and demonstrations were achieved, shedding a new light on the feasibility of a NV‐based quantum computer. Herein, the recently developed method of charge‐assisted single defect engineering is reviewed. With a controlled charging of the involved species, it modifies the diffusion or kinetics of defect formation and acts as a catalyzer of the NV creation while hindering the formation of competing and perturbing defects such as divacancies or NVH. Very high NV creation yields up to 75% are obtained and the method is suitable to other impurity‐vacancy defects. Furthermore, it has positive consequences on the charge state stability and coherence time of the NV centers, which is as well discussed. Together with the possibility to nowadays deterministically implant single ions, this powerful method brings the scalability of NV qubits closer.

中文翻译：

钻石色彩中心的充电辅助工程

由于其独特的光学和自旋特性，氮空位（NV）中心有望实现基于钻石的室温可扩展量子计算机，但尚未克服许多技术和物理问题，特别是N对NV较差的问题转换。但是，NV和其他色心已成功用作多任务量子传感器，并在量子感测技术中开辟了新的途径。最近，取得了一些突破和演示，为基于NV的量子计算机的可行性提供了新的思路。这里，回顾了最近开发的电荷辅助单缺陷工程方法。通过对所涉物种的控制收费，它改变了缺陷形成的扩散或动力学，并充当了NV生成的催化剂，同时阻碍了诸如空位或NVH之类的竞争性和扰动性缺陷的形成。获得了高达75％的极高NV生成率，该方法适用于其他杂质空位缺陷。此外，它对NV中心的电荷状态稳定性和相干时间也有积极的影响，对此也进行了讨论。再加上如今可以确定性地注入单个离子的可能性，这种强大的方法使NV量子位的可扩展性更加接近。它对NV中心的电荷状态稳定性和相干时间具有积极影响，对此也进行了讨论。再加上如今可以确定性地注入单个离子的可能性，这种强大的方法使NV量子位的可扩展性更加接近。它对NV中心的电荷状态稳定性和相干时间具有积极影响，对此也进行了讨论。再加上如今可以确定性地注入单离子的可能性，这种强大的方法使NV量子位的可扩展性更加接近。

更新日期：2021-03-03

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