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TiO2 Nanowire Array Memristive Devices Emulating Functionalities of Biological Synapses
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-01-12 , DOI: 10.1002/aelm.202000950 Carola Ebenhoch 1 , Lukas Schmidt‐Mende 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-01-12 , DOI: 10.1002/aelm.202000950 Carola Ebenhoch 1 , Lukas Schmidt‐Mende 1
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Memristors are deemed to be the electrical twin to biological synapses. They enable emulation of human memory functionalities such as learning, memorizing, and forgetting. The present hydrothermally grown titanium dioxide nanowire array memristive devices have shown to be able to mimic synaptic behaviors. As well as spike‐rate dependent plasticity, excitatory postsynaptic currents, and paired pulse facilitation, high endurance, and on/off ratios for the nanowire arrays are presented. Decay fitting of postsynaptic currents with Kohlrausch's equation shows lifetimes of few milliseconds up to several hundred seconds, offering the possibility of a short‐term to long‐term memory transition. Furthermore, a strong dependence of the lifetime of the signals on the frequency and amplitude of the stimulation pulses is observed.
中文翻译：
TiO2纳米线阵列忆阻器件模拟生物突触的功能。
忆阻器被认为是生物突触的双胞胎。它们可以模拟人类记忆功能，例如学习，记忆和遗忘。本发明的水热生长的二氧化钛纳米线阵列忆阻器件已经显示出能够模仿突触行为。除了尖峰速率相关的可塑性外，还介绍了兴奋性突触后电流和成对的脉冲促进作用，高耐力以及纳米线阵列的开/关比。用Kohlrausch方程对突触后电流的衰减拟合显示了几毫秒到几百秒的寿命，从而提供了从短期到长期记忆转变的可能性。此外，观察到信号的寿命强烈依赖于刺激脉冲的频率和幅度。
更新日期：2021-02-15
中文翻译：
TiO2纳米线阵列忆阻器件模拟生物突触的功能。
忆阻器被认为是生物突触的双胞胎。它们可以模拟人类记忆功能，例如学习，记忆和遗忘。本发明的水热生长的二氧化钛纳米线阵列忆阻器件已经显示出能够模仿突触行为。除了尖峰速率相关的可塑性外，还介绍了兴奋性突触后电流和成对的脉冲促进作用，高耐力以及纳米线阵列的开/关比。用Kohlrausch方程对突触后电流的衰减拟合显示了几毫秒到几百秒的寿命，从而提供了从短期到长期记忆转变的可能性。此外，观察到信号的寿命强烈依赖于刺激脉冲的频率和幅度。
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