In this work, the influences of the magnetic field configuration (mirror-field and closed-field) on plasma parameters and ion flux dynamics of dual magnetron reactive high power impulse magnetron sputtering (R-HiPIMS) with Al targets in Ar/O₂ mixture were studied by time-resolved Langmuir probe and time-averaged mass spectrometer. Compared with mirror-field configuration, the electron density (n_e) in the closed-field discharge is obviously higher while the plasma potential (V_p), floating potential (V_f) and effective electron temperature (T_eff) were lower. Time-averaged mass spectrometer results showed that the plasma compositions in both configurations were similar. The ion energy distribution functions (IEDFs) recorded at both discharges consisted of three components: a main narrow peak at low energy followed by a broad shoulder and then a high energy tail. Compared with the closed-field discharge, the mirror-field discharge exhibited higher peak energies but lower ion fluxes. For both discharges, the ions intensity increased immediately after the start of the negative voltage pulse. The signal for the mirror-field discharge peaked exactly at the end of the pulse, whereas fluxes of the ion species in the closed-field configuration reached the highest value 10 μs after the voltage pulse termination. To investigate how changes in the magnet arrangement affect the film properties, Al₂O₃ thin films were deposited and characterized. It is confirmed that the magnet configuration appeared to have little influence on the deposition rate. In addition, high average energy per deposited atom in the closed-field discharge resulted in a well densified and stoichiometric crystalline Al₂O₃ film.

在这项工作中，磁场配置（镜场和闭场）对具有Ar靶的Ar / O ₂混合物中的双磁控反应性高功率脉冲磁控溅射（R-HiPIMS）的等离子体参数和离子通量动力学的影响用时间分辨Langmuir探针和时间平均质谱仪进行了研究。与镜场配置相比，闭场放电中的电子密度（n _e）明显更高，而等离子体电势（V _p），浮置电势（V _f）和有效电子温度（T _eff））较低。时间平均质谱仪结果表明，两种配置中的血浆成分均相似。在两次放电中记录的离子能量分布函数（IEDF）由三个成分组成：低能量时的主窄峰，然后是宽肩峰，然后是高能尾峰。与闭场放电相比，镜场放电具有较高的峰值能量，但离子通量较低。对于这两种放电，离子强度在负电压脉冲开始后立即增加。镜场放电的信号恰好在脉冲结束时达到峰值，而封闭场配置中离子物种的通量在电压脉冲终止后10μs达到最大值。为了研究磁体排列的变化如何影响膜性能，Al沉积并表征₂ O ₃薄膜。可以确认，磁体构造似乎对沉积速率几乎没有影响。另外，在封闭场放电中每个沉积原子的高平均能量产生了致密化和化学计量良好的结晶Al ₂ O ₃膜。