The radiative energy loss accounts for roughly 70% of the energy loss in the polysilicon chemical vapor deposition (CVD) reactors and therefore takes up to about 25% cost in the production of polysilicon used for solar cells. In this work, cold spray (CS) process was used to deposit Ag coating with ultra-high infrared reflectance on inner wall of the CVD reactor to minimize the radiative losses. To solve the bond strength problem of depositing soft coatings on hard substrate by CS, a Ni buffer layer with medium hardness was introduced. Results show that Ag coating can be successfully deposited with a porosity lower than 0.1%. Even the as-sprayed Ag coating has a high near-infrared reflectivity of 92% which was much higher than that of a well-polished substrate surface (65%) suggesting an excellent radiation energy saving capacity. The bond strength of the Ag coating is significantly increased from 3.7 MPa to 35.4 MPa and the thermal shock resistance is improved from 22 ± 3 to over 150 cycles by the Ni buffer layer. The scientific methodology demonstrated here can be a cost effective approach to reduce the radiation energy losses in the polysilicon-CVD industry.

辐射能量损失约占多晶硅化学气相沉积（CVD）反应器中能量损失的70％，因此，在生产用于太阳能电池的多晶硅时，其成本高达约25％。在这项工作中，冷喷涂（CS）工艺用于在CVD反应器的内壁上沉积具有超高红外反射率的Ag涂层，以最大程度地减少辐射损失。为了解决通过CS在硬质基底上沉积软涂层的结合强度问题，引入了中等硬度的Ni缓冲层。结果表明，可以成功地以小于0.1％的孔隙率沉积Ag涂层。甚至喷涂后的Ag涂层也具有92％的高近红外反射率，这比经过良好抛光的基材表面（65％）要高得多，这表明它具有出色的辐射节能能力。通过Ni缓冲层，Ag涂层的结合强度从3.7 MPa显着提高到35.4 MPa，耐热冲击性从22±3提高到150循环以上。这里展示的科学方法论可以是降低多晶硅CVD工业中辐射能量损失的一种经济有效的方法。