In this paper, the fabrication and material innovation involved in the first and only entirely inkjet-printed polysilicon thin film transistors (TFTs) are described. To form TFT layers, five inkjet printing inks were developed with the goal of fabricating TFTs by using purely additive processing without vacuum deposition or conventional lithography. A silicon ink was developed to form both the channels and polysilicon gates, and boron and phosphorus dopant inks were developed for N+ and P+ doping. In addition, a silver nanoparticle (NP) ink was developed to form interconnect traces, and a palladium chloride ink was formulated to create palladium silicide for the ohmic contacts between the source and the drain. The first N-type metal-oxide-semiconductor (MOS) polysilicon TFT was fabricated with a top-gate self-alignment scheme. This exhibited a mobility of approximately 80 cm² V s⁻¹. Next, P-type MOS transistors as well as complementary MOS devices were also successfully fabricated.

在本文中，描述了第一个且仅是完全喷墨印刷的多晶硅薄膜晶体管（TFT）涉及的制造和材料创新。为了形成TFT层，开发了五种喷墨印刷油墨，其目的是通过使用纯加成工艺而不进行真空沉积或常规光刻来制造TFT。开发了硅油墨以形成沟道和多晶硅栅极，开发了硼和磷掺杂剂油墨以进行N +和P +掺杂。此外，开发了一种银纳米粒子（NP）墨水以形成互连迹线，并配制了氯化钯墨水以创建用于源极和漏极之间欧姆接触的硅化钯。使用顶栅自对准方案制造了第一N型金属氧化物半导体（MOS）多晶硅TFT。² V s ^-1。接下来，还成功地制造了P型MOS晶体管以及互补MOS器件。