Carrier velocity modulation by asymmetrical concave quantum barriers to improve the performance of AlGaN-based deep-ultraviolet light emitting diodes has been investigated. The concave structure is realized by inserting a low Al composition AlGaN layer in the barrier, and thus forming a concave region on energy band. The measured device performance shows a significant improvement under 0–250 mA operation current, with the maximum external quantum efficiency and light output power of 1.02% and 8.0 mW, which are more than double (2.32 and 2.35 times) of that for the conventional one, respectively. Simulation confirms that the concave quantum barriers make it possible for electrons to be scattered, which reduce the electron energy before being injected into quantum wells, and thus the capability of quantum wells to capture electrons is enhanced. Meanwhile, the vertical transport of holes within the active region is also enhanced because the asymmetrical setting of the concave layer in the quantum barriers helps holes accelerate under the polarization field, and then get more energy to overcome the barrier.

中文翻译：

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通过非对称凹量子势垒调制载流子速度以提高基于 AlGaN 的深紫外发光二极管的性能

已经研究了通过不对称凹量子势垒进行载流子速度调制以提高基于 AlGaN 的深紫外发光二极管的性能。通过在势垒中插入低Al组分AlGaN层，从而在能带上形成凹区来实现凹结构。实测器件性能在 0-250 mA 工作电流下显着提升，最大外量子效率和光输出功率分别为 1.02% 和 8.0 mW，是传统器件的两倍多（2.32 和 2.35 倍） ， 分别。仿真证实，凹量子势垒使得电子有可能被散射，从而降低了电子注入量子阱之前的能量，从而增强了量子阱捕获电子的能力。