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Role of Cation Ordering on Device Performance in (Ag,Cu)InSe2 Solar Cells with KF Post-Deposition Treatment
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2021-01-11 , DOI: 10.1021/acsaem.0c02197 Tara Nietzold 1 , Nicholas Valdes 2 , Michael E. Stuckelberger 3 , Michelle Chiu 1 , Trumann Walker 1 , April M. Jeffries 1 , Archana Sinha 4 , Laura T. Schelhas 4 , Barry Lai 5 , William N. Shafarman 2 , Mariana I. Bertoni 1
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2021-01-11 , DOI: 10.1021/acsaem.0c02197 Tara Nietzold 1 , Nicholas Valdes 2 , Michael E. Stuckelberger 3 , Michelle Chiu 1 , Trumann Walker 1 , April M. Jeffries 1 , Archana Sinha 4 , Laura T. Schelhas 4 , Barry Lai 5 , William N. Shafarman 2 , Mariana I. Bertoni 1
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CuInSe2 (CIS) has been proposed as an attractive bottom cell candidate in tandem solar cells. However, to justify the coupling with high-performance top cells (e.g., perovskites, GaAs), significant work on improving the efficiency is required. To this extent, several authors have demonstrated the benefits of alkali post-deposition treatments (PDT) to increase device open-circuit voltage (Voc) in CIS and how Ag alloying—(Ag,Cu)InSe2 (ACIS)—reduces defect density and enhances current collection in devices. Herein, we present a detailed study of the role that KF-PDT plays on CIS and ACIS absorber composition and structure, and propose an explanation for the decreased Voc observed when silver and potassium coexist in the system (ACIS + KF). Through a suite of synchrotron-based techniques, we investigate the nanoscale chemical distribution of the films and the formation of secondary phases. Through photoluminescence imaging, we observed a high degree of passivation with the addition of KF, and synchrotron-based X-ray diffraction confirmed the absence of a KInSe2 surface layer usually considered to be a passivating agent. Raman spectroscopy and synchrotron X-ray fluorescence show the increased presence of Cu- and Se-poor clusters in ACIS + KF, which are correlated to significantly reduced X-ray beam-induced current (XBIC). An increase in the intensity of the E/B2 stretching mode of CIS is attributed to cation ordering near the junction and is found to track inversely to bulk Voc measurements. The cation ordering is hypothesized to arise from the formation and redistribution of defects that normally occur near the surfaces of CIS as a consequence of its polar character. These defects compensate each other, and the overall inhomogeneity of the charge distribution generates electrostatic potential fluctuations that greatly increase the saturation current and hence reduce the open-circuit voltage of the device.
中文翻译：
阳离子有序化对KF沉积后（Ag，Cu）InSe 2太阳能电池中器件性能的作用
CuInSe 2（CIS）已经被提出作为串联太阳能电池中有吸引力的底部电池候选者。但是，为了证明与高性能顶部电池（例如钙钛矿，GaAs）耦合的合理性，需要在提高效率方面进行大量工作。在此程度上，几位作者已经证明了碱后沉积处理（PDT）可以提高CIS中的器件开路电压（V oc）的好处，以及Ag合金化（Ag，Cu）InSe 2（ACIS）如何减少缺陷密度并增强设备中的电流收集。本文中，我们将详细研究KF-PDT在CIS和ACIS吸收剂的组成和结构中的作用，并提出降低V oc的解释。当系统中银和钾共存时（ACIS + KF）观察到。通过一套基于同步加速器的技术，我们研究了薄膜的纳米级化学分布和第二相的形成。通过光致发光成像，我们观察到了添加KF的高度钝化，并且基于同步加速器的X射线衍射证实了通常被认为是钝化剂的KInSe 2表面层的缺失。拉曼光谱和同步加速器X射线荧光显示，ACIS + KF中铜和硒贫簇的存在增加，这与X射线束感应电流（XBIC）显着降低有关。E / B 2的强度增加CIS的拉伸模式归因于结附近的阳离子排列，并且发现其与体积V oc测量值成反比。假定阳离子有序是由于缺陷的形成和重新分布引起的，这些缺陷通常是由于其极性特性而在CIS表面附近发生的。这些缺陷会相互补偿，并且电荷分布的整体不均匀性会产生静电势波动，从而极大地增加了饱和电流，从而降低了器件的开路电压。
更新日期：2021-01-25
中文翻译：
阳离子有序化对KF沉积后（Ag，Cu）InSe 2太阳能电池中器件性能的作用
CuInSe 2（CIS）已经被提出作为串联太阳能电池中有吸引力的底部电池候选者。但是，为了证明与高性能顶部电池（例如钙钛矿，GaAs）耦合的合理性，需要在提高效率方面进行大量工作。在此程度上，几位作者已经证明了碱后沉积处理（PDT）可以提高CIS中的器件开路电压（V oc）的好处，以及Ag合金化（Ag，Cu）InSe 2（ACIS）如何减少缺陷密度并增强设备中的电流收集。本文中，我们将详细研究KF-PDT在CIS和ACIS吸收剂的组成和结构中的作用，并提出降低V oc的解释。当系统中银和钾共存时（ACIS + KF）观察到。通过一套基于同步加速器的技术，我们研究了薄膜的纳米级化学分布和第二相的形成。通过光致发光成像，我们观察到了添加KF的高度钝化，并且基于同步加速器的X射线衍射证实了通常被认为是钝化剂的KInSe 2表面层的缺失。拉曼光谱和同步加速器X射线荧光显示，ACIS + KF中铜和硒贫簇的存在增加，这与X射线束感应电流（XBIC）显着降低有关。E / B 2的强度增加CIS的拉伸模式归因于结附近的阳离子排列，并且发现其与体积V oc测量值成反比。假定阳离子有序是由于缺陷的形成和重新分布引起的，这些缺陷通常是由于其极性特性而在CIS表面附近发生的。这些缺陷会相互补偿，并且电荷分布的整体不均匀性会产生静电势波动，从而极大地增加了饱和电流，从而降低了器件的开路电压。
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