The emerging two‐dimensional (2D) tellurium (tellurene) has attracted much attention due to its high carrier transportability and prominent air stability. Micrometer‐scale bilayer (BL) tellurene field‐effect transistors (FETs) are successfully fabricated with a large on/off current ratio of about 10⁵. Here, the transport properties of both the n‐ and p‐type double‐gated sub‐10 nm BL tellurene metal‐oxide‐semiconductor FETs (MOSFETs) are systematically explored by using ab initio quantum transport simulation. The optimized 5, 7, and 9 nm gate‐length p‐type x‐ and y‐directed BL tellurene MOSFETs with a proper underlap and negative capacitance dielectric can meet or nearly meet the on‐state current, delay time, power dissipation, and energy‐delay product requirements of the International Technology Roadmap for Semiconductors for the 2022–2028 horizons for high‐performance applications. This renders BL tellurene to join the air‐stable channel candidate for the p‐type sub‐10 nm transistors.

中文翻译：

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双层Tellurene：潜在的p型沟道材料，用于低于10 nm的晶体管

新兴的二维（2D）碲（tellurene）由于其高的载流子运输性和出色的空气稳定性而备受关注。微米级双层（BL）碲铝场效应晶体管（FET）成功地以大约10 ⁵的大开/关电流比制造。在这里，使用从头算起的量子传输模拟系统地研究了n型和p型双栅极亚10 nm BL碲锌金属氧化物半导体FET（MOSFET）的传输特性。优化的5、7和9 nm栅极长度p型x和y具有适当的下陷和负电容电介质的定向BL碲化MOSFET可以满足或几乎满足《国际半导体技术路线图》针对2022-2028年的导通状态电流，延迟时间，功耗和能量延迟产品要求。高性能应用程序。这使得BL碲脲可以加入p型10 nm以下晶体管的空气稳定通道候选。