Thin films of cadmium-incorporated ZnO (CZO) have been synthesized and investigated for potential light detecting applications. Epitaxial, c-axis oriented growth of CZO films was achieved using pulsed laser deposition technique. X-ray diffraction and atomic force microscopy analyses of the as-deposited CZO film were compared with those of undoped ZnO film in order to comprehend the effect of cadmium incorporation on the microstructural and electrical properties of ZnO. Hall measurements performed at 298 K revealed a high mobility of 169.26 cm²/V for the CZO film deposited on c-plane sapphire substrate. Non-alloyed contacts of indium (In) and aluminum (Al) were metalized on the film surface using thermal evaporation and current-voltage (I–V) measurements were made in the metal/semiconductor/metal (MSM) configuration at 298 K. While the In/ZnO/In device showed a linear I–V response, the In/CZO/In device exhibited non-linear and asymmetric I–V curves. Upon exposure to a UV light source of intensity 24 μW/cm², this non-linearity was found to reduce significantly and a high photosensitivity of 175.9% and responsivity of 110.75 A/W was recorded for the In/CZO/In MSM device. The photoelectrical behavior of the Al/CZO/Al device was found to be consistently ohmic under both dark and illuminated conditions.

已经合成了掺镉的ZnO（CZO）薄膜，并对其进行了研究，以用于潜在的光检测应用。使用脉冲激光沉积技术实现了CZO膜的外延，c轴定向生长。比较了沉积后的CZO膜和未掺杂的ZnO膜的X射线衍射和原子力显微镜分析，以了解镉掺入对ZnO的微观结构和电学性质的影响。在298 K进行的霍尔测量表明，沉积在C上的CZO膜具有169.26 cm ² / V的高迁移率平面蓝宝石衬底。使用热蒸发法将铟（In）和铝（Al）的非合金触点金属化在薄膜表面，并以298 K的金属/半导体/金属（MSM）配置进行电流-电压（IV）测量。 In / ZnO / In器件显示出线性的I–V响应，而In / CZO / In器件则显示出非线性和不对称的I–V曲线。在暴露于强度为24μW/ cm ²的UV光源后，发现该非线性度显着降低，并且In / CZO / In MSM器件的光敏度为175.9％，响应度为110.75 A / W。发现在黑暗和光照条件下，Al / CZO / Al器件的光电性能始终为欧姆。