This paper reports the details of fabrication of aluminum-doped zinc oxide (AZO) thin films on Corning glass substrates by pulsed laser deposition technique at different laser ablation fluences: 8.75, 17.5 and 35 J/cm². The influence of laser fluence on the structural, optical and electrical properties of the prepared thin films is analyzed and discussed. X-ray diffraction pattern of AZO thin film confirmed a non-polar a-plane oriented crystal growth in the AZO film prepared at higher fluences. Field emission scanning electron microscopic images indicate the dependence of grain size of AZO on the laser fluence. The highest transmittance (>86%) and the lowest resistivity is attained in thin film prepared at 35 J/cm² fluence. A remarkable switching behavior from p-type to n-type semiconductivity is observed. The achieved optoelectronic properties of non-polar a – plane oriented AZO thin film, suggests the prepared thin film is a promising material in the fabrication of LED device.

本文详细介绍了通过脉冲激光沉积技术在8.75、17.5和35 J / cm ^2的不同激光烧蚀量下在康宁玻璃基板上制备铝掺杂氧化锌（AZO）薄膜的详细信息。分析和讨论了激光能量密度对制备的薄膜的结构，光学和电学性质的影响。AZO薄膜的X射线衍射图证实了在以较高通量制备的AZO膜中非极性a平面取向的晶体生长。场发射扫描电子显微镜图像表明，AZO的晶粒尺寸与激光能量密度有关。以35 J / cm ²制备的薄膜具有最高的透射率（> 86％）和最低的电阻率通量。观察到了从p型到n型半导体的显着转换行为。非极性α-平面取向的AZO薄膜的光电性能表明，制备的薄膜是LED器件制造中很有希望的材料。