Bismuth as an element of group VA (P, As, Sb, Bi), which is considered as beyond graphene materials, has attracted much attention because of its stable topological insulator properties. Herein, photoelectrochemical (PEC)-type photodetector based on two-dimensional bismuth nanosheets was designed and fabricated. By using a solid electrolyte to replace the traditional electrolyte, we have achieved a novel structure to make the device more portable. Besides that, due to the solid/liquid heterojunction, which generates an built-in electric field that can separate electron hole pairs effectively, this type of photodetector possess self-powered ability, and it exhibited preferable photoresponsivity which is about 0.5 μA W⁻¹ without external bias potential; meanwhile, the rise time of the photodetector is about 3.3 s and decay time is about 1.8 s. Moreover, we used the flexible indium-tin oxide (ITO) as the substrate; the prepared device can work under the bending states. The novel structure and the excellent properties of the fabricated self-powered flexible PEC-type photodetector make it more promising in the optical detection field.

铋作为VA组（P，As，Sb，Bi）的一种元素，被认为是石墨烯材料以外的元素，由于其稳定的拓扑绝缘体性能而备受关注。本文中，设计并制造了基于二维铋纳米片的光电化学（PEC）型光电探测器。通过使用固体电解质代替传统的电解质，我们实现了一种新颖的结构，使该设备更加便携。除此之外，由于固态/液态异质结会产生可有效分离电子空穴对的内置电场，因此这种类型的光电探测器具有自供电能力，并且表现出约0.5μAW ^-1的较佳光响应性无外部偏置电位；同时，光电探测器的上升时间约为3.3 s，衰减时间约为1.8 s。此外，我们使用了柔性的铟锡氧化物（ITO）作为基材；准备好的设备可以在弯曲状态下工作。所制造的自供电柔性PEC型光电探测器的新颖结构和优异的性能使其在光学探测领域更具前景。