The photocatalytic efficiency of semiconducting catalytic material is greatly influenced by one of the important factor like band gap. In the area of sustainable energy and environmental decontamination, ZnO photocatalysts have been extensively used. However, there is a significant decrease in the photocatalytic performance of ZnO due its large band gap, and fast recombination of charge carriers. Various methods have been designed to address this issue, such as nanostructuring, chemical doping, introducing oxygen defects, surface sensitization, and employing nanocomposites. Here, the semiconducting ZnO, ZnO/GO were prepared by simple co-precipitation method and solid state reaction respectively. The synthesised ZnO, ZnO/GO catalysts were characterized thoroughly by different techniques such as X-ray diffraction (XRD), Raman spectroscopy, Fourier Transform infrared Spectroscopy (FTIR), Field emission scanning electron microscopy (FESEM), Diffuse reflectance spectroscopy(DRS), photoluminescence (PL), BET specific surface area. The E_g values of ZnO/GO has found to be 2.71 eV which is lower than the bare ZnO (2.81 eV), which is benefit to have higher photocatalytic activity. The performance of synthesized catalysts was explored for remediation of CV dye by employing visible light as energy source to begin photoreaction. The ZnO/GO nanohybrid has shown 99% degradation of CV in 240 min under neutral pH and rate constant found to be 0.01514 min⁻¹ which is much higher than bare ZnO. In ZnO/GO nanohybrid, the phenomenal photocatalytic efficacy was attributed to the suppressed charge carriers (electron in CB and holes in VB) recombination and adequate injection of photosensitized electron in the hybrid during the photocatalytic reaction. Further, GO itself acts as electron collector and transporter and thereby furnishes electrons for enhancing the photocatalytic reaction by providing reactive oxygen species and hydroxyl radicals for the degradation of crystal violet. Addtionally, the interrelationship between the physical properties like band gap and catalytic competence were founded.

半导体催化材料的光催化效率受带隙等重要因素之一的影响很大。在可持续能源和环境净化领域，ZnO光催化剂已被广泛使用。然而，由于ZnO的带隙大和电荷载流子的快速复合，其光催化性能显着下降。已经设计出各种方法来解决这个问题，例如纳米结构化，化学掺杂，引入氧缺陷，表面敏化和使用纳米复合材料。在此，分别通过简单的共沉淀法和固态反应制备半导体ZnO，ZnO / GO。合成的ZnO，ZnO / GO催化剂通过X射线衍射（XRD），拉曼光谱，傅里叶变换红外光谱（FTIR），场发射扫描电子显微镜（FESEM），漫反射光谱（DRS），光致发光（PL），BET比表面积。E发现ZnO / GO的_g值为2.71eV，低于裸ZnO（2.81eV），这有利于具有更高的光催化活性。通过利用可见光作为能源开始光反应，探索了合成催化剂对CV染料的修复性能。ZnO / GO纳米杂化物在中性pH下240分钟内显示出99％的CV降解，速率常数为0.01514 min ^-1远远高于裸露的ZnO。在ZnO / GO纳米杂化物中，显着的光催化功效归因于抑制的载流子（CB中的电子和VB中的空穴）的重组以及在光催化反应过程中杂化体中适当注入的光敏电子。此外，GO本身充当电子收集器和传输器，并因此通过提供活性氧和羟基自由基以降解结晶紫而提供电子以增强光催化反应。另外，建立了带隙等物理性质与催化能力之间的相互关系。