The syntheses of new cobalt, manganese and zinc phthalocyanine complexes containing 4-pentylphenylethynyl substituents at the peripheral positions are reported. 4-[(4-pentylphenyl) ethynyl] phthalonitrile was obtained through Sonogashira coupling reaction. The new compounds have been characterized using UV–vis, FT- IR, ¹H NMR, ¹³C NMR, and mass spectroscopy data. In order to study the dependence of device performance on the central metal atom, photosensitive field effect transistor based on tetra-substituted metallo phthalocyanines with [(4-pentylphenyl) ethynyl groups at peripheral positions were fabricated and characterized. Photoelectric characterization results showed that the device with active layer of 3 exhibits highest photoelectric performance with maximum field effect mobility (4.27 ×10^-3 cm²/Vs), photosensitivity (72.05), and photo/dark current ratio (230). It was found that the photoelectric performance of the Pc compounds depends on the central metal atom which is found consistent with UV–vis spectrum. Surface topography of the sensing films were analyzed by atomic force microscopy.

报道了在外围位置含有4-戊基苯基乙炔基取代基的新型钴，锰和锌酞菁配合物的合成。通过Sonogashira偶联反应获得4-[（（4-戊基苯基）乙炔基]邻苯二甲腈。使用UV-vis，FT-IR，¹ H NMR，¹³ C NMR和质谱数据对新化合物进行了表征。为了研究器件性能对中心金属原子的依赖性，制备并表征了基于在外围位置具有[（4-戊基苯基）乙炔基的四取代金属酞菁的光敏场效应晶体管。光电表征结果表明，该器件的有源层为3具有最大的光电性能，具有最大的场效应迁移率（4.27×10 ^-3 cm ² / Vs），光敏性（72.05）和光/暗电流比（230）。已经发现，Pc化合物的光电性能取决于中心金属原子，该金属原子与UV-vis光谱一致。通过原子力显微镜分析感测膜的表面形貌。