Abstract

This study proposes an approach for building high quality cheap emitters in mid-wave (MW) and long-wave (LW) infrared spectrum bands. A photonic infrared-wave emitter based on light down conversion from the region of fundamental absorption by semiconductor to infrared region has been proposed. The efficiency of such conversion does not depend on quantum yield of interband recombination. It increases with the rise of emitter temperature and can be optically controlled. Such device has a large working surface area with spectral characteristics that do not depend on the forbidden bandwidth in semiconductor. The calculated and experimental characteristics of the power of silicon photonic emitter in 3–5 μm and 8–12 μm wavelength bands as a function of the temperature and intensity of exciting radiation are also presented. The parameters of the known emitters and proposed one are compared, and the technological description of the proposed device is presented.

中文翻译：

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硅光子红外波发射器

摘要

这项研究提出了一种在中波（MW）和长波（LW）红外光谱带中构建高质量廉价发射器的方法。已经提出了基于从半导体的基本吸收区域到红外区域的光降转换的光子红外波发射器。这种转换的效率不取决于带间重组的量子产率。它随着发射极温度的升高而增加，并且可以进行光学控制。这种装置具有较大的工作表面积，其光谱特性不取决于半导体中的禁带宽度。还介绍了在3–5μm和8–12μm波段中硅光子发射器的功率的计算和实验特性，它是激发辐射的温度和强度的函数。