Abstract

Investigation of GaN epitaxial layers on silicon substrates is driven by high potential for fabrication of high efficiency and relatively low-cost electronic devises. Growth process of GaN layers on Si by molecular-beam epitaxy is complicated by mutual diffusion of Si and Ga and differences in thermal expansion coefficients and lattice parameters causing large number of defects. To improve the quality of GaN layers high temperature nitridation of silicon substrates was applied leading to stress relaxation and decrease of diffusion.

中文翻译：

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氮化硅分子束外延在Si（111）上合成的GaN外延层的拉曼光谱

摘要

硅衬底上GaN外延层的研究受到制造高效率和相对低成本电子设备的高潜力的推动。Si和Ga的相互扩散以及热膨胀系数和晶格参数的差异导致大量缺陷，使得通过分子束外延在Si上生长GaN层的过程变得复杂。为了提高GaN层的质量，对硅衬底进行了高温氮化处理，导致应力松弛和扩散降低。