Abstract

The Ag/Ge/Si(001) stacks with threading dislocations growing through the Ge epitaxial layers (ELs) manifested bipolar resistive switching (RS) between two metastable resistance states. Scanning transmission electron microscopy (STEM) provided a direct evidenced the RS mechanism to consist in the electrodiffusion of Ag⁺ ions along the dislocations in the Ge ELs. Also, STEM revealed multiple RS cycling to result in the metallization of the Ge matrix around the dislocations and in the accumulation of Ag in the misfit dislocation layer near Ge/Si interface. Both above phenomena may lead potentially to degradation of the RS performance.

中文翻译：

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基于Ge / Si（001）外延层的忆阻器中的电阻开关

摘要

Ag / Ge / Si（001）叠层具有贯穿Ge外延层（EL）增长的穿线位错，表现出在两个亚稳态电阻状态之间的双极电阻转换（RS）。扫描透射电子显微镜（STEM）提供了直接的证据，表明RS机制包括沿Ge ELs中的位错沿Ag ⁺离子的电扩散。此外，STEM还显示了多个RS循环，导致位错周围的Ge基体金属化，并导致Ge / Si界面附近错配位错层中Ag的积累。以上两种现象都可能导致RS性能下降。