In this paper, we propose, design and simulate a new double gate (DG) tunnel field effect transistor (TFET), using germanium (Ge) source, dual dielectric gate oxide, gate/drain underlap and a metal drain. The device is designed to address two important issues of a conventional TFET, that is, the poor ON current (I_ON) and the presence of ambipolar conduction. In the proposed device, the use of Ge material for the source region and a dual dielectric gate oxide enhances the I_ON significantly and employing metallic drain and a gate-drain underlap fully suppresses the ambipolarity conduction. This can be attributed to the formation of a Schottky barrier at channel/drain interface. Two-dimensional (2D) calibrated simulation studies have been performed using the commercial TCAD device simulator. The results have shown that the I_ON has improved by almost ~3 orders whereas ambipolar current is completely suppressed in the proposed device in comparison to the conventional DG-TFET. Further, it has been found that the proposed device has a subthreshold slope (SS) of 35 mV/dec, I_ON of ~2×10⁻⁴ A/ μm and the I_ON to I_OFF ratio (I_ON/I_OFF) of ~10¹³. The proposed device performance can be improved further by optimizing various device parameters, like underlap length etc. A flow chart mentioning the key fabrication steps has also been proposed to fabricate the proposed device.

在本文中，我们使用锗（Ge）源，双电介质栅氧化物，栅/漏底衬和金属漏，提出，设计和模拟了一种新型的双栅（DG）隧道场效应晶体管（TFET）。该器件旨在解决传统TFET的两个重要问题，即导通电流（I _ON）不良和双极性导电的存在。在所提出的器件中，使用Ge材料作为源极区域和双电介质栅氧化物可增强I _ON显着的是，采用金属漏极和栅极漏极的下重叠可完全抑制双极性传导。这可以归因于在沟道/漏极界面处形成了肖特基势垒。已使用商用TCAD设备模拟器进行了二维（2D）校准的模拟研究。结果表明，与传统的DG-TFET相比，该器件的I _ON改善了约3个数量级，而双极性电流被完全抑制了。此外，已经发现，所提出的设备具有一个亚阈值斜率35毫伏/癸的（SS），I _ON〜2×10 ^-4 A /微米和I _ON到I _OFF比（I _ON / I _OFF）的〜10 ¹³。可以通过优化各种器件参数（如重叠长度等）来进一步提高所提出的器件性能。还提出了提及关键制造步骤的流程图来制造所提出的器件。