In this work, a newly found innovative interposable lookup table based nonlinear empirical DC I-V model for GaN HEMT device has been formulated. Angelov and Yang's models have been taken as reference models to study the effects of bias (V_gs, V_ds) dependent traps (gate lag and drain lag), self-healing, virtual gate formation, etc. on I-V characteristics functions and their inclusion into I-V equation functions of the proposed model. A new polynomial ratio function of V_ds with its coefficients varying with V_gs has been formulated as a first function of the I-V model equation, to describe the transfer characteristics of the GaN HEMT. The obtained coefficients of the polynomial ratio function have been calculated by the curve fitting tool, are used to form a look-up table so that the I-V model is fast and accurate. Model verification has been done using 8 × 75 µm gate periphery and 0.25 µm gate length GaN HEMT of UMS foundry. The measured and modeled results of I-V characteristics as well as transfer characteristics are compared and found to be matched accurately with each other. Because of this, this model is more accurate and proficient in the representation of GaN HEMT I-V characteristics when compared to the Angelov DC I-V model. The proposed methodology can be used to model all GaN HEMT devices.Using the proposed nonlinear I-V equation, an empirical model has been generated in AWR MWO using an interpolable lookup table of coefficients varying with V_gs for the GaN HEMT of UMS, CREE and WIN foundry, which can be used for Computer-Aided Design (CAD) of RF circuits, etc.

在这项工作中，制定了一个新发现的创新的基于GaN HEMT器件的基于非线性经验DC IV模型的可插入查找表。安杰洛夫和杨的模型已被用作参考模型，以研究依赖于偏压（V _gs，V _ds）的陷阱（栅极滞后和漏极滞后），自愈，虚拟栅极形成等对IV特性函数及其包含的影响。到建议模型的IV方程函数中。V _ds的新多项式比率函数，其系数随V _gs变化公式化为IV模型方程式的第一个函数，以描述GaN HEMT的传输特性。曲线拟合工具已计算出所获得的多项式比率函数的系数，并将其用于形成查找表，从而使IV模型快速准确。使用UMS铸造厂的8×75 µm栅极外围和0.25 µm栅极长度的GaN HEMT进行了模型验证。比较了IV特性以及传递特性的测量结果和建模结果，发现它们彼此精确匹配。因此，与Angelov DC IV模型相比，该模型在GaN HEMT IV特性的表示上更为准确和熟练。所提出的方法可用于对所有GaN HEMT器件进行建模。使用所提出的非线性IV方程，_GS为UMS，CREE和WIN铸造在GaN HEMT，其可被用于RF电路等的计算机辅助设计（CAD）