Half-metallic nanocrystalline magnetite (Fe₃O₄) thin films, with different thicknesses were developed on polyethylene-terephthalate (PET) substrates, by reactive sputtering at room temperature. Fe₃O₄ film (200-nm thick)/PET heterostructures possess superior electrical and magnetic characteristics, with a Verwey transition temperature (T_v) of ~122 K and a saturation magnetization (M_s) ~ 361 emu/cm³. Furthermore, the antiferromagnetic (AFM)-coupled antiphase boundaries (APBs) controlled the transport properties of the Fe₃O₄ thin films, due to the tunneling of spin-polarized electrons through the films. Very-high magnetoresistance (MR) value (−8.9%) were observed for H$\Vert$Film plane, constructed from Fe₃O₄ (200-nm thick)/PET when H values were below 60 kOe at 300 K. In addition, flexibility tests, to examine resistivity, M-H and MR, were performed using with 90° and 45° bent angles and cyclability experiments were implemented to validate the reproducibility of these characteristics. These outcomes demonstrated that Fe₃O₄/PET heterostructures may represent a promising candidate for flexible/wearable spintronics.

通过在室温下进行反应溅射，在聚对苯二甲酸乙二醇酯（PET）基板上显影了具有不同厚度的半金属纳米晶磁铁矿（Fe ₃ O ₄）薄膜。的Fe ₃ ø ₄膜（厚度为200nm）/ PET异质结构具有优良的电性能和磁性能，具有维韦转变温度（Ť _v）K和饱和磁化强度的〜122（M_小号）〜361鸸鹋/厘米³。此外，反铁磁（AFM）耦合的反相边界（APBs）控制了Fe ₃ O ₄的传输性质。薄膜，这是由于自旋极化电子穿过薄膜的隧穿。对于H观察到非常高的磁阻（MR）值（-8.9％）$\Vert$在300 K下H值低于60 kOe时，由Fe ₃ O ₄（200 nm厚）/ PET构成的薄膜平面。此外，还使用90°和45°进行了挠性测试，以检查电阻率，MH和MR。进行了°弯曲角度和可循环性实验，以验证这些特性的可重复性。这些结果表明，Fe ₃ O ₄ / PET异质结构可能代表柔性/可穿戴自旋电子器件的有前途的候选者。