Electronic, magnetic and optical properties of Te doped g-GaN monolayer, before and after adsorbing the dimethylmercury molecule, (CH₃)₂Hg, were studied by DFT approach. Our calculations show that, unlike pure g-GaN monolayer, the g-GaN + Te is n-type, in which the previous gap (2.16 eV) changes to the spin gaps of 1.53 and 1.65 eV. This monolayer is a III-V ferromagnetic, that it can be used in the spin field effect transistors (FET). We showed that the adsorption of (CH₃)₂Hg by g-GaN + Te monolayer is possible. The g-GaN + Te+(CH₃)₂Hg layer is n-type, and its band gap is 2.23 eV. Both g-GaN + Te and g-GaN + Te+(CH₃)₂Hg layers, beside the g-GaN monolayer, can be used in the GaN-based p-n junction betavoltaic cells and GaN p-i-n diodes. Also, in the g-GaN + Te+(CH₃)₂Hg case there are two terahertz gaps with values of 0.02 and 0.11 eV. After calculating the optical properties of both g-GaN + Te and g-GaN + Te+(CH₃)₂Hg layers by TDDFT, we found that the refractive index has values of 1.15 and 1.25, respectively. Also, the g-GaN + Te and g-GaN + Te+(CH₃)₂Hg layers, each have one visible absorption peak at 2.89 and 1.83 eV, respectively.

用DFT方法研究了Te掺杂的g-GaN单层在吸附二甲基汞分子（CH ₃）₂ Hg之前和之后的电子，磁和光学性质。我们的计算表明，与纯g-GaN单层不同，g-GaN + Te是n型，其中先前的间隙（2.16 eV）变为1.53和1.65 eV的自旋间隙。此单层是III-V型铁磁性，可用于自旋场效应晶体管（FET）。我们表明，g-GaN + Te单层吸附（CH ₃）₂ Hg是可能的。g-GaN + Te +（CH ₃）₂ Hg层为n型，其带隙为2.23 eV。g-GaN + Te和g-GaN + Te +（CH ₃）₂除g-GaN单层外，Hg层还可用于基于GaN的pn结β电池和GaN pin二极管中。同样，在g-GaN + Te +（CH ₃）₂ Hg的情况下，存在两个太赫兹间隙，其值分别为0.02和0.11 eV。通过TDDFT计算出g-GaN + Te和g-GaN + Te +（CH ₃）₂ Hg层的光学性能后，我们发现折射率分别为1.15和1.25。同样，g-GaN + Te和g-GaN + Te +（CH ₃）₂ Hg层分别在2.89和1.83 eV处具有一个可见吸收峰。