We have investigated the relationship between the transport properties and electronic states of fluorine-doped tin dioxide (FTO) films prepared by ultrasonic assisted mist deposition. The resistivity of the films has the minimum against F/Sn ratios caused by the saturation of carrier concentration. The core-level and valence band PES spectra revealed that there were fluorine ions with two different chemical states and excess fluorine ions tended to form impurity states in band gap, which would not contribute to the conduction of the films. These spectroscopic results well explain the saturated tendency of the carrier concentration of the FTO films.

中文翻译：

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超声辅助雾化法制备掺氟SnO _2的输运性质和电子结构

我们已经研究了通过超声辅助雾化沉积制备的掺氟二氧化锡（FTO）薄膜的传输性能与电子态之间的关系。薄膜的电阻率对由载流子浓度饱和引起的F / Sn比具有最小的影响。核心能级和价带PES光谱表明，存在具有两种不同化学态的氟离子，并且过量的氟离子倾向于在带隙中形成杂质态，这对薄膜的导电性无贡献。这些光谱结果很好地解释了FTO膜的载流子浓度的饱和趋势。