In this paper, barrier height (\(\phi_{{\text{b}}}\)) and depletion layer width (W_d) of ITO-coated glass/Methyl Red (MR) dye/Aluminum (Al)-based organic device have been studied, and effect of single-walled carbon nanotubes (SWCNT) on both of these parameters has been observed. ITO-coated glass as front electrode and Aluminum as back electrode are used to form the device by using spin coating technique. \(\phi_{{\text{b}}}\) is calculated by analyzing both I–V and C–V characteristics. In the presence of SWCNT, \(\phi_{{\text{b }}}\) is reduced from 0.870 ± 0.05 eV to 0.754 ± 0.05 eV in I–V characteristics and from 0.850 ± 0.12 eV to 0.784 ± 0.12 eV in C–V characteristics. \(\phi_{{\text{b }}}\) is also estimated by Norde method, which shows the presence of SWCNT lowers the value of \(\phi_{{\text{b }}}\) from 0.852 eV to 0.738 eV. W_d has been calculated from C–V characteristics. With SWCNT, value of W_d reduces from (8.74 ± 0.02) × 10⁻⁶ cm to (7.85 ± 0.02) × 10⁻⁶ cm. Threshold voltage also decreases from 2.52 V to 1.99 V in the presence of SWCNT. Addition of SWCNT within device ameliorates charge injection by lessening \(\phi_{{\text{b}}}\) and W_d of the device.

在本文中，ITO涂层玻璃/甲基红（MR）染料/铝（Al）基的势垒高度（\（\ phi _ {{\ text {b}}} \）和耗尽层宽度（W _d）对有机器件进行了研究，并观察到单壁碳纳米管（SWCNT）对这两个参数的影响。通过旋涂技术，使用ITO涂层玻璃作为前电极，铝作为后电极来形成器件。\（\ phi _ {{\ text {b}}} \）是通过分析I–V和C–V特性来计算的。在存在SWCNT的情况下，\（\ phi _ {{\ text {b}}} \）的I–V特性从0.870±0.05 eV降低到0.754±0.05 eV，而I–V特性从0.850±0.12 eV降低到0.784±0.12 eV。 C–V特性。\（\ phi _ {{\ text {b}}} \）也可以通过Norde方法进行估算，这表明SWCNT的存在将\（\ phi _ {{\ text {b}}} \）的值从0.852 eV降低到0.738 eV。W _d由C–V特性计算得出。使用SWCNT，W _d的值从（8.74±0.02）×10 ^-6 cm减小到（7.85±0.02）×10 ^-6 cm。在存在SWCNT的情况下，阈值电压也从2.52 V降至1.99V。在器件内添加SWCNT可通过减小器件的\（\ phi _ {{\ text {b}}} \）和W _d来改善电荷注入。