We determined the entire spectral shape of a broad band around 0.8eV, previously termed the C08-band, which was observed commonly in Si by room-temperature photoluminescence after electron irradiation. The band has a peak at 0.770.01eV with long tails on both sides. We identified that the C08-band has the same origin as the C-line and occurs as a result of the recombination between a free electron and a hole bound by the deep trap due to the interstitial C and O defects (C_iO_i). The long tails were explained by the superposition of phonon sidebands.

中文翻译：

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电子辐照硅中间隙碳和氧缺陷（C _i O _i）的自由束缚发射

我们确定了0.8eV附近宽频带的整个光谱形状，以前称为C08频带，通常在电子辐照后通过室温光致发光在Si中观察到。该谱带的峰值位于0.770.01eV，两侧均带有长尾巴。我们发现，C08谱带与C谱线具有相同的起源，并且是由于间隙C和O缺陷（C _i O _i）导致自由电子与被深陷阱束缚的空穴之间的复合而产生的。长尾巴通过声子边带的叠加来解释。