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Free-to-bound emission from interstitial carbon and oxygen defects (CiOi) in electron-irradiated Si
Applied Physics Express ( IF 2.3 ) Pub Date : 2021-01-08 , DOI: 10.35848/1882-0786/abd4c6
Michio Tajima 1, 2 , Shota Asahara 3 , Yuta Satake 3 , Atsushi Ogura 1, 3
Affiliation  

We determined the entire spectral shape of a broad band around 0.8eV, previously termed the C08-band, which was observed commonly in Si by room-temperature photoluminescence after electron irradiation. The band has a peak at 0.770.01eV with long tails on both sides. We identified that the C08-band has the same origin as the C-line and occurs as a result of the recombination between a free electron and a hole bound by the deep trap due to the interstitial C and O defects (CiOi). The long tails were explained by the superposition of phonon sidebands.



中文翻译:

电子辐照硅中间隙碳和氧缺陷(C i O i)的自由束缚发射

我们确定了0.8eV附近宽频带的整个光谱形状,以前称为C08频带,通常在电子辐照后通过室温光致发光在Si中观察到。该谱带的峰值位于0.770.01eV,两侧均带有长尾巴。我们发现,C08谱带与C谱线具有相同的起源,并且是由于间隙C和O缺陷(C i O i)导致自由电子与被深陷阱束缚的空穴之间的复合而产生的。长尾巴通过声子边带的叠加来解释。

更新日期:2021-01-08
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