Atomic layer deposited Al₂O₃/GaN metal-oxide-semiconductor (MOS) diodes with and without post-metallization annealing (PMA) were irradiated with gamma-rays. Capacitance–voltage measurements were made before and after irradiation to investigate trap formation in Al₂O₃ films and interface states between Al₂O₃ and GaN. Negative flat-band voltage shifts were observed. The flat-band voltage shift depends on the Al₂O₃ thickness, showing different distributions of gamma-ray-induced positive charges for samples with and without PMA. The interface state density of the PMA sample slightly increased after irradiation, but was lower than that of the sample without PMA before irradiation.

带有和不带有后金属化退火（PMA）的原子层沉积Al ₂ O ₃ / GaN金属氧化物半导体（MOS）二极管均受到伽玛射线照射。在辐照前后进行电容电压测量，以研究Al ₂ O ₃膜中的陷阱形成以及Al ₂ O ₃与GaN之间的界面状态。观察到负的平带电压偏移。平带电压偏移取决于Al ₂ O ₃厚度，显示带有和不带有PMA的样品的伽马射线诱导的正电荷的不同分布。PMA样品的界面态密度在辐照后略有增加，但低于没有PMA辐照前的界面态密度。