We report a recessed-gate enhancement-mode Al₂O₃-ZrO₂/Al_0.6Ga_0.4N/Al_0.4Ga_0.6N metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) with drain current as high as 0.48 Amm⁻¹ at a gate-source voltage of +12 V. This was enabled by a pseudomorphic HFET structure with graded back barrier for strain management and to screen the growth interface from the channel. The device exhibited a threshold-voltage (V _TH) of 2.750.57 V with absolute maximum V _TH = 3.6 V, a +12.2 V shift from that for a depletion-mode MOSHFET fabricated on the same wafer. A 3-terminal breakdown voltage of 700 V was measured in the off-state, showing the viability of E-mode UWBG AlGaN for power electronics.

我们报告的凹栅极增强型的Al ₂ ö ₃ -ZrO ₂ / Al的_0.6镓_0.4 N /铝_0.4镓_0.6与漏极电流作为高氮金属-氧化物-半导体异质结构场效应晶体管（MOSHFET）为0.48 AMM ^-栅极-源极电压为+12 V时处于图^{1所示的状态}。这是通过具有渐变背势垒的伪晶HFET结构实现的，以进行应变管理并从沟道屏蔽生长界面。该器件的阈值电压（V _TH）为2.750.57 V，绝对最大V _TH= 3.6 V，与在同一晶片上制造的耗尽型MOSHFET的电压相比，偏移了+12.2V。在截止状态下测得的700 V的3端击穿电压表明了E型UWBG AlGaN在电力电子领域的可行性。