Spin-orbit torque (SOT) magnetoresistance (MR) devices have attracted attention for use in next-generation MR devices. The SOT devices are known to exhibit different write properties based on the relative angle between the magnetization direction of the free layer and the write-current direction. However, few studies that compare the write properties of each type have been reported. In this study, we measured the external perpendicular-magnetic field dependence of the threshold write current density and the write current switching probability using two types of in-plane magnetization SOT-MR devices.

中文翻译：

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自旋轨道转矩面内磁阻器件中高速写入特性对外部磁场的依赖性

自旋轨道扭矩 (SOT) 磁阻 (MR) 器件在下一代 MR 器件中的使用引起了人们的关注。已知 SOT 器件根据自由层的磁化方向和写入电流方向之间的相对角度表现出不同的写入特性。然而，很少有研究比较每种类型的写入特性。在这项研究中，我们使用两种类型的面内磁化 SOT-MR 器件测量了阈值写入电流密度和写入电流切换概率的外部垂直磁场依赖性。