This work investigates wideband active load-pull (WALP) on microwave electron devices with a standard vector network analyzer (VNA), solely using calibrated frequency-domain relative measurements. Differently from the methods requiring full time-domain waveform acquisition capabilities, this approach removes any instantaneous bandwidth (BW) requirement, allowing to target modulated signals with arbitrarily large BWs. A VNA-based measurement setup is presented, and a novel mathematical framework is developed in order to enable the synthesis of an arbitrary wideband load profile using suitable numerical algorithms. A linear precompensation of the LS output match of the device, here implemented by different methods, is shown to significantly improve the speed and the stability of the basic secants' iterative method used to reach the target. Performance results, investigating the convergence properties of the approach and the effects of the setup dynamic range, are reported for a gallium nitride (GaN) high-electron-mobility transistor (HEMT) for up to 120-MHz output BW in the sub-6-GHz range.

中文翻译：

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宽带有源负载 — 使用矢量网络分析仪完全通过设备输出匹配补偿


这项工作使用标准矢量网络分析仪 (VNA) 研究微波电子设备上的宽带有源负载牵引 (WALP)，仅使用校准的频域相对测量。与需要完整时域波形采集功能的方法不同，该方法消除了任何瞬时带宽 (BW) 要求，从而可以针对具有任意大 BW 的调制信号。提出了基于 VNA 的测量设置，并开发了一种新颖的数学框架，以便能够使用合适的数值算法合成任意宽带负载曲线。器件的 LS 输出匹配的线性预补偿（这里通过不同的方法实现）被证明可以显着提高用于达到目标的基本割线迭代方法的速度和稳定性。报告了氮化镓 (GaN) 高电子迁移率晶体管 (HEMT) 的性能结果，研究了该方法的收敛特性以及设置动态范围的影响，在 sub-6 中输出带宽高达 120 MHz -GHz 范围。