For the first time, we present an electro-optic slot waveguide phase modulator on the InP membrane on Silicon (IMOS) platform. Low-frequency characterization of this modulator shows that it can achieve a $ {V}_{ {\pi }} {L}_{ {\pi }}$ product as low as 4.5 V.mm and an extinction ratio equal to 10.6 dB. The 3-dB optical bandwidth of this modulator is measured to be 10.5 GHz. Here, working principles, design, fabrication, measurements, analysis of the electrical and electro-optic performance and prospects of this modulator are presented.

中文翻译：

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硅平台上 InP 膜上的电光槽波导相位调制器

我们首次在硅基 InP 膜 (IMOS) 平台上展示了​​一种电光缝隙波导相位调制器。该调制器的低频特性表明它可以实现 $ {V}_{ {\pi }} {L}_{ {\pi }}$ 产品低至 4.5 V.mm，消光比等于 10.6 dB。该调制器的 3-dB 光带宽经测量为 10.5 GHz。在这里，介绍了该调制器的工作原理、设计、制造、测量、电气和电光性能分析以及前景。