The influence of the nitrogen gas ratio on the gallium nitride (GaN) film growth has been investigated using a high-density convergent plasma sputtering device at room temperature. To obtain a highly reactive environment for GaN film growth, the convergent magnetic field lines assist the high-density plasma transport near the target surface. An orthogonal array in the design of experiments was used to effectively investigate GaN film growth conditions. To optimize the GaN film growth conditions, we focus on four sputtering parameters: (1) the ${\mathrm{N}}_2$ gas flow ratio, (2) the inflowing ion current to the target, (3) the process gas pressure, and (4) the target-substrate distance. The ${\mathrm{N}}_2$ gas flow ratio mainly characterizes the growth condition of $c$-axis oriented wurtzite-structure GaN films on an unheated glass substrate. The full width at half maximum of the rocking curve for the GaN(0002) peak position decreases to 3.9${}^{°}$ in the growth condition with 100% nitrogen at room temperature.

中文翻译：

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室温下氮气流量比对氮化镓薄膜生长的影响

已经在室温下使用高密度会聚等离子体溅射装置研究了氮气比率对氮化镓（GaN）膜生长的影响。为了获得用于GaN膜生长的高反应性环境，会聚磁场线辅助目标表面附近的高密度等离子体传输。实验设计中的正交阵列用于有效研究GaN膜的生长条件。为了优化GaN膜的生长条件，我们关注四个溅射参数：（1）${\mathrm{ñ}}_2$气体流量比，（2）流入目标的离子电流，（3）处理气体压力，以及（4）目标与基板的距离。的${\mathrm{ñ}}_2$ 气体流量比主要表征了气体的生长条件。 $C$未加热玻璃基板上的长轴取向纤锌矿结构GaN膜。GaN（0002）峰值位置的摇摆曲线的半峰全宽降低到3.9${}^{°}$ 在室温下100％氮的生长条件下。