In this work, a process condition was created to deposit a thin film of diamond on AISI O1 steel in a hot filament chemical vapor deposition (CVD) reactor. The main drawbacks to overcome are the diamond film high residual stresses caused by the difference between the coefficient of thermal expansion (CTE) of steel (∼12 × 10⁻⁶ K⁻¹) and diamond (0.8 × 10⁻⁶ K⁻¹). Our group proposed a diffusion vanadium carbide (VC) interlayer as a potential solution to mitigate carbon dissolution in the substrate and graphite formation instead of diamond; however, the intermediate CTE of VC still provides high thermal stress and delamination of the film. A solution was proposed by performing the diamond CVD on the AISI O1 steel substrate above the steel austenitizing temperature, under the prospect that thermal stress will be minimized during cooling, since the return of steel from faced-centered cubic to body-centered cubic crystalline structures will cause substrate expansion. The lower residual stress was accomplished by the diamond growth temperature of 840 °C with all the steel substrate above the austenitizing critical temperature. The residual stress mitigation was 3.9 GPa, merging VC interlayer and high growth temperature, where numerical simulation exposed the same stress created by the growth temperature at 545 °C.

中文翻译：

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减轻碳化钒涂层钢上高温CVD金刚石膜的残余应力

在这项工作中，创建了在热丝化学气相沉积（CVD）反应器中在AISI O1钢上沉积金刚石薄膜的工艺条件。要克服的主要缺点是金刚石膜的高残余应力是由钢（〜12×10 ^-6  K ^-1）和金刚石（0.8×10 ^-6  K ^-1）之间的热膨胀系数（CTE）之差引起的）。我们的小组提出了一种扩散性碳化钒（VC）中间层作为缓解碳在基材中溶解和形成石墨而不是金刚石的潜在解决方案。但是，VC的中间CTE仍然提供高的热应力和薄膜分层。通过在钢奥氏体化温度以上的AISI O1钢基底上执行金刚石CVD，提出了一种解决方案，因为钢会从面心立方晶体返回到体心立方晶体结构，因此在冷却过程中热应力将降至最低会导致基材膨胀。较低的残余应力是由840°C的金刚石生长温度实现的，所有钢基底都高于奥氏体化临界温度。残余应力缓解为3.9 GPa，