Direct growth of III–V semiconductors on Si promises to combine the superior optoelectronic properties of III–Vs with the existing large-scale fabrication capabilities for Si. Vapor-liquid-solid-based growth techniques have previously been used to grow optoelectronic-quality III–Vs in polycrystalline films and various photolithography-defined features. We show that templated vapor-liquid-solid growth can produce epitaxial material when performed on crystalline substrates. In templated vapor-liquid-solid growth, the metal group-III precursor is evaporated along with a capping ${\mathrm{SiO}}_2$ layer on the crystalline substrate, then melted and converted with exposure to a vapor-phase group-V precursor. We demonstrate homoepitaxial growth of InP on InP wafers using two forms of the ${\mathrm{SiO}}_{\mathrm{x}}$ capping layer to confine the liquid metal: evaporated ${\mathrm{SiO}}_2$ and solgel ${\mathrm{SiO}}_{\mathrm{x}}$, the latter of which is necessary for growth on Si. We then demonstrate heteroepitaxial growth of InP islands on Si substrates from both evaporated and electroplated In metals. The templated vapor-liquid-solid process provides better material utilization and growth rates than common vapor-phase techniques, with similar control and convenience, providing a path toward the large-scale fabrication of integrated optoelectronic components.

中文翻译：

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模板化气液固相生长在InP在Si上异质外延中的应用

III–V半导体在Si上的直接生长有望将III–V的优异光电性能与现有的大规模Si生产能力相结合。基于汽-液-固的生长技术先前已用于在多晶膜和各种光刻定义的特征中生长具有光电质量的III–V。我们表明，在结晶衬底上进行模板化气液固相生长可以产生外延材料。在模板化的气-液-固生长中，III族金属前驱体与封盖一起蒸发${\mathrm{二氧化硅}}_2$然后将其在结晶基质上沉积一层，然后熔融并暴露于气相V族前体而转化。我们演示了使用两种形式的InP在InP晶片上进行同质外延生长${\mathrm{二氧化硅}}_{\mathrm{X}}$ 覆盖层以限制液态金属：蒸发 ${\mathrm{二氧化硅}}_2$ 和溶胶 ${\mathrm{二氧化硅}}_{\mathrm{X}}$，后者对于在Si上生长是必需的。然后，我们证明了Si衬底上InP岛的异质外延生长是通过蒸发和电镀In金属实现的。与常见的气相技术相比，模板化的气液固过程可提供更好的材料利用率和增长率，并具有类似的控制和便利性，为大规模制造集成光电组件提供了一条途径。