Scaling down the dimensions of Metal–Oxide–Semiconductor​ Field-Effect Transistors (MOSFETs) evinces discrete switching usually referred to as random telegraph signal (RTS). Such RTSs are usually attributed to the capture and emission of charge carriers by a single active trap located in an oxide layer. Machlup calculated the noise spectrum caused by these charge carriers based on probabilistic arguments. In this paper, we derive Machlup’s noise spectrum differently: the g–r​ noise is attributed to a random succession of elementary g–r pulses. This enables g–r bulk noise to be interpreted in terms of the numbers of traps. The transition from g–r bulk noise to discrete switching is found by reducing the number of traps to just one single active trap. The resulting g–r noise spectrum is shown to be equivalent to Machlup’s noise spectrum. The probability of an overlap of succeeding g–r pulses is calculated. Such an overlap is attributed to occupation of an empty single trap by an electron transferred from a neighboring trap. We simulate a g–r pulse train and find a large variety of patterns similar to those observed in MOSFETs. Excluding overlapping g–r pulses, the up-and-down distribution of succeeding g–r pulses is estimated.

按比例缩小金属氧化物半导体场效应晶体管（MOSFET）的尺寸需要离散开关，通常称为随机电报信号（RTS）。此类RTS通常归因于位于氧化物层中的单个有源陷阱对载流子的捕获和发射。Machlup根据概率论证计算了这些电荷载流子引起的噪声谱。在本文中，我们以不同的方式导出Machlup的噪声谱：–噪声归因于基本g脉冲的随机序列。这使gr体噪声可以根据陷阱的数量来解释。通过将陷阱的数量减少到仅一个有源陷阱，可以发现从gr体噪声到离散开关的过渡。结果表明，g–r噪声谱与Machlup的噪声谱等效。计算随后的g–r个脉冲重叠的概率。这种重叠归因于从相邻陷阱捕获的电子对空的单个陷阱的占据。我们模拟了ag–r脉冲序列，并发现了与MOSFET中观察到的模式相似的各种模式。除重叠的gr脉冲外，还估计了后续gr脉冲的上下分布。