In this work, we investigate the effect of BOX (Buried OXide) and silicon thickness on the SCE (Short-Channel Effects) of ET-SOI (Extremely Thin Silicon-on-Insulator) MOSFETs. It is found that the minimum channel length L_min is only moderately sensitive to the BOX thickness but strongly dependent on the silicon thickness. For a given threshold voltage, the choice of gate work function in combination with the backgate bias also plays a role on L_min. Reverse bias mitigates SCE while forward bias aggravates SCE. An empirical expression of L_min in terms of silicon thickness is given.

中文翻译：

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BOX厚度，硅厚度和背栅偏压对ET-SOI MOSFET的SCE的影响

在这项工作中，我们研究了BOX（掩埋氧化物）和硅厚度对ET-SOI（极薄绝缘体上硅）MOSFET的SCE（短沟道效应）的影响。发现最小沟道长度L _min仅对BOX厚度适度敏感，而在很大程度上取决于硅厚度。对于给定的阈值电压，栅极功函数的选择与背栅偏置的组合也对L _min起作用。反向偏置可减轻SCE，而正向偏置则会加剧SCE。给出了根据硅厚度的L _min的经验表达式。