The Cu2O/CuO/SnO2 transparent pn junction film device with Cu2+ self-oxidation transition layer is prepared via a simple thermal oxidation-sputtering method. There, the Cu2O is prepared via a simple sputtering method, the CuO transition layer is prepared via a thermal self-oxidation method on the surface of Cu2O film, and subsequently the SnO2 film is deposited via the sputtering method on the surface of CuO transition layer. As revealed, the as-prepared transparent photovoltaic device exhibits highly transparency of about ~ 75%, obvious photovoltaic conversion enhancement of about ~ 450 folds than unmodified device, decent stability during 10000 s’ cycle, which can be mainly ascribed to the Cu2+ self-oxidation transition layer; there, the appropriate Fermi level and nicer lattice matching can provide a decent channel for charge carrier transport, and the visible light response can improve photo-generated carrier excitation and injection. Additionally, the structure design of Cu2O/CuO/SnO2 can prevent the oxidation of Cu2O to increase photovoltaic stability.

中文翻译：

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Cu2O/CuO/SnO2透明pn结薄膜器件利用Cu2+自氧化过渡层实现光伏增强

采用简单的热氧化-溅射法制备了具有Cu2+自氧化过渡层的Cu2O/CuO/SnO2透明pn结薄膜器件。在那里，通过简单的溅射法制备Cu2O，通过热自氧化法在Cu2O薄膜表面制备CuO过渡层，然后通过溅射法在CuO过渡层表面沉积SnO2薄膜. 正如所揭示的，所制备的透明光伏器件表现出约 75% 的高透明度，明显的光伏转换增强比未修改的器件高约 450 倍，在 10000 s 周期内具有良好的稳定性，这主要归因于 Cu2+ 自氧化过渡层；在那里，适当的费米能级和更好的晶格匹配可以为电荷载流子传输提供合适的通道，可见光响应可以改善光生载流子的激发和注入。此外，Cu2O/CuO/SnO2 的结构设计可以防止 Cu2O 氧化以提高光伏稳定性。