In order to decrease the decomposition temperature of SiC, 12nm Fe thin film is applied on SiC substrates as a catalyst layer using electron beam (e-beam) deposition. To investigate the mechanism of Fe-treated SiC decomposition, local Fe regions are formed through dewetting of the catalyst layer by hydrogen annealing. The results show that Fe decreases the decomposition temperature of SiC effectively and increases the kinetics of the graphitization. Studies showed that depending on the amount of Fe, crumpled and ordered graphene films can be synthesized simultaneously on SiC by using this method.

中文翻译：

---

铁对碳化硅表面石墨化的影响

为了降低 SiC 的分解温度，12使用电子束（e-beam）沉积在 SiC 衬底上施加 nm Fe 薄膜作为催化剂层。为了研究 Fe 处理的 SiC 分解的机理，通过氢退火对催化剂层进行去润湿形成局部 Fe 区域。结果表明，Fe有效降低了SiC的分解温度，增加了石墨化的动力学。研究表明，根据 Fe 的含量，使用这种方法可以在 SiC 上同时合成起皱和有序的石墨烯薄膜。